The Dynamic Characteristics of an 1700 V 50 A 4H-SiC MOSFET via a Double Pulse Test

Wednesday, July 12, 2023

3:15 PM - 5:00 PM PDT

Location: Moscone South, Exhibition Level Room 9

Poster Presenter(s)

Pei-Chun Liao, Master

Student
National Taiwan University

Session Slides
CL

Charleen Liu

Student
National Taiwan University
Kung-Yen Lee, PhD

Professor
National Taiwan University, Taipei, Taiwan (Republic of China)

The poster presents results of the dynamic characteristics of an 1700 V 50A 4H-SiC power MOSFET by using the douple pulse tester.When power devices are utilized within a high-frequency application, it is important to acknowledge the substantial influence of the capacitance effect on the switching characteristics of these devices. This effect encompasses various factors, such as energy loss and delay time, which significantly impact their overall performance.The experimental results show a low on-resistance (Rds,on) , low switching loss, and a maximum saturation current of up to 90 A, indicating the structure, fabrication, and testing of the home-made 1700 V, 50 A 4H-SiC power VDMOSFET is ready for high-power conversion systems.