Three-dimensional integration (3DI) technology has garnered significant attention for improving circuit performance and integrating heterogeneous semiconductor devices such as sensors, processors, and memory on a single platform. 3DI is typically achieved by stacking multiple chips vertically together into a single package, connected using hybrid bonding or through-silicon vias. In wafer-to-wafer (W2W) hybrid bonding technology, the dielectric and embedded metal are bonded simultaneously in a comparatively cost-efficient solution, but the industry still faces numerous challenges to achieve robust and successful hybrid bonding. In this work, we present our recent work exploring the use of Cu(Ag) alloys to meet the mechanical and electrical requirements for W2W bonding. Secondary Ion Mass Spectrometry (SIMS) determined that the silver content decreases with increasing duty cycle. High Angle Annular Dark Field (HAADF) imaging in a Scanning Transmission Electron Microscope (STEM) with energy dispersive x-ray spectroscopy (EDS) was used to visualize the thin film microstructure and to confirm the uniform distribution of silver throughout the film, with no banding despite the pulsed nature of the deposition. Four-point probe measurements quantified the impact of Ag content on resistivity, finding the expected linear relationship to the Ag content in the film. Furthermore, the coefficient of thermal expansion (CTE) of the films was measured using X-ray diffraction, and modulus and hardness were measured via nanoindentation, finding linear dependences on the Ag content as well. These simple relationships offer a range of properties tunable via the duty cycle of the pulsed plating, making CuAg a promising candidate for engineering W2W metal interconnections.