Today, RF and low Power applications markets are taking full benefit of SOI technologies through the use of High Resistivity substrates and FD-SOI technologies. High resistivity substrates are widely used on different technology nodes down to 45nm. FD-SOI technologies are now available at 28nm and 22nm. In the near future, new technological nodes will have to be developped to ensure the growth of those markets by using SOI wafers. In this talk, we will detail the needs in term of requirements, as well as the on-going developments to satisfy those needs.