In this paper we describe a 200Mpixel CMOS image sensor with 0.56um pixels implemented in a 28nm process. This pixel technology is the next generation development after out 0.61um pixel. The sensor demonstrates a full well capacity of 5.5ke- with lower dark current and read noise than our previous generation pixel. In addition, this sensor demonstrates similar quantum efficiency (QE) and phase detection autofocus (PDAF) performance in comparison to our previous generation pixels. This sensor also implements multiple functions including switched conversion gain and high-speed readout.
