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Brought to you by the SEMI Global Automotive Advisory Council (GAAC)
Due to its properties of wide band gap and high thermal conductivity, Silicon Carbide is a compelling choice for an increasing number of semiconductor power applications in a multitude of growing industries. Higher voltages, higher frequency of operation and overall efficiency gains are obtained. Specifically for e-mobility, size and weight for a given performance, as well as enhanced charging speed, can be significant benefits over conventional silicon. However, the SiC industry faces several important challenges, roughly charactererized as:
1. Quality: Reliability demanded from the automotive sector is severe and the maturity of processing SiC is relatively low.
2. Cost of Production: Achieving high and consistent yields is challenging in the fab and the supply chain.
3. Capacity: The increasing demand is leading to capacity constraints in SiC substrate manufacturers and fabs
The goal of this open SiC event is to enhance the collaboration within the key players of the SiC ecosystem with the specific objectives to:
* Understand the SiC fabrication and supply chain related challenges
* Share experiences and options of solutions
* Trigger meaningful collaborations along the value chain.
Session Moderator: Bettina Weiss – SEMI
Session Moderator: Wenge Yang, Ph.D – Entegris Inc.
Speaker: David Britz, DPhil – Applied Materials
Speaker: Victor Veliadis, PhD – PowerAmerica
Speaker: Ralf Bornefeld – Robert Bosch GmbH
Speaker: Lee Bell – STMicroelectronics
Speaker: Catherine Bullock – Axus Technology
Speaker: Emmanuel Sabonnadière, PhD – SOITEC
Speaker: Niraj Mahadev – Entegris