RFSOI technologies are used today in the RF section of all cellular handsets, performing a number of different critical RF switching and tuning functions, and recently also providing an even larger number of low noise amplifiers, digital CMOS blocks and critical analog functions. This talk will discuss the history of RFSOI technology, the critical enablers that allowed it to in a relatively short amount of time, completely replace the existing III-V switch technologies. The progression to today’s modern RFSOI technologies and its array of device options will also be described, as well as future trends in RF switching technologies. In particular, the RF front end of the future will incorporate a number of 3D technologies in both die-to-wafer and wafer-to-wafer bonding approaches in order to reduce critical dimensions while providing superior RF performance.
